This 1st Workshop on Defects in Semiconductor Materials and Devices provides a forum for discussion of the latest developments in the characterization and control of defects in semiconductor materials for electronic, photonic and memory applications. Both crystalline and amorphous semiconductors are considered, ranging from 2D materials, over hetero-epitaxial layers to bulk crystals/wafers. The focus is on the understanding of how grown-in or processing-induced point and extended defects affect the device performance, reliability and yield. Techniques for chemical and structural identification of defects are of vital importance in order to understand the root cause of their formation and possible ways to control or eliminate them. Besides experimental characterization, ab initio modeling aspects based on Density Functional Theory and TCAD modeling of defect effects in devices will be also included.

Contributed papers are solicited in the following main areas:

1. High purity epitaxial growth techniques
    * modeling of epitaxial growth processes and intrinsic grown-in point defects
    * epitaxial fabrication techniques, epi layer processing, interaction with substrate properties
    * in situ doping and activation
    * strain engineering, strain management and relaxation

2. Impurity related and intrinsic bulk defects
    * point defect mechanisms and clustering, influence of doping concentrations, carrier lifetime behavior
    * group IV doping effects in group IV semiconductors
    *doping in III-V and III-N alloys
    * Ab initio calculations of point and extended defect properties

3. Diagnostic techniques
    * lifetime and impurity level studies, spectroscopic techniques, spreading resistance probing, Hall-effect, electron paramagnetic resonance
    * characterization techniques relevant to the assessment of impurities and defects

4. Device and integration aspects
    * radiation and high energy particle detectors, avalanche photodiodes, strip- and pixel detectors, infrared components, power devices, radiation hardening of    materials and devices; photonic components
    * flexible electronics and 3D integration
    * device physics, noise performance, low temperature operation, reliability aspects

A one-page abstract (including figures) must be submitted electronically to imec (This email address is being protected from spambots. You need JavaScript enabled to view it.) not later than February 1, 2020. Notification of the acceptance will be given by February 25, 2020. (PhD)-students are strongly encouraged to consider abstract submission. The best student paper will be awarded with a diploma and a grant.

Important dates

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