Workshop on Defects in Semiconductor Materials and Devices
Unfortunately, we have to postpone the Defects-2020 workshop due to the current restrictions imposed by the worldwide spread of the SARS-CoV-2 virus. An updated program will be announced ~2 months before the new date of the workshop

Thursday 16 April

8.45u-
9.00u
Welcome and introductory remarks Eddy Simoen | imec


Session 1: Defect Characterization – Chair: Roger Loo & Cor Claeys

09.00u-09.45u Invited Speaker: Defect characterization by e-beam techniques Hugo Bender | imec
   
09.45u-10.05u Optical beam-based fault isolation methods for TSV interconnect defects in 3D integration Kristof J.P. Jacobs | imec
   
10.05u-10.50u Invited Speaker: Reliability and defects Tibor Grasser | TU Vienna
   
10.50u-11.20u Coffee break 
   
11.20u-12.05u Invited Speaker: Nanoprobe characterization of defects in semiconductors Albert Minj | imec
   
12.05u-12.25u  Stable partial basal stacking faults in hexagonal Si, Ge and SiGe alloys Elham Fadaly | Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
   
12.25u-12.30u  Conference picture 
   
12.30u-13.30u  Lunch break 
   

 

Session 2: 2D materials & other advanced semiconductors – Chair: Sofie Cambré & Hartmut Bracht 
 

13.30u-14.15u Invited Speaker:  ESR of dopants in 2D materials Andre Stesmans | KU Leuven
   
14.15u-14.35u Neutron irradiation effects on four-quadrant SiC radiation detectors  J.M. Rafí | Instituto de Microelectrónica
de Barcelona, CNM-CSIC, Bellaterra, Spain
   
14.35u-14.55u  The SnV- defect in diamond: experimental evidence of the split-vacancy configuration  André Vantomme | KU Leuven 
   
14.55u-15.15u  Electrically-active defects in rutile TiO2 

Julie Bonkerud  | Department of Physics, Centre for
Materials
Science and Nanotechnology University of Oslo, Norway

   
15.15u-15.45u  Coffee break   
   
15.45u-17.05u 

5 minutes poster introduction Chair: Albert Minj  

  P1: Application of electron channeling contrast imaging to beyond Si semiconductors
Han Han1,2, Thomas Hantschel1, Libor Strakos3, Tomas Vystavel3, Andreas Schulze1,4, Clement Porret1, Brent Hsu1, Bernadette Kunert1, Roger Loo1, Wilfried Vandervorst1,2 and Matty Caymax11imec, Leuven, Belgium & 2KU Leuven, Dept. of Physics and Astronomy, Leuven, Belgium & 3Thermo Fischer Scientific, Brno, Czech Republic & 4Applied Materials, Santa Clara, USA
 
   
  P2: Fluctuation electron microscopy on ion-implanted amorphous silicon
Dražen Radić1, Sven Hilke1, Martin Peterlechner1, Matthias Posselt2 and Hartmut Bracht1
1University of Münster, Institute of Materials Physics, Münster, Germany & 2Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
 
   
  P3: Correlation study between molten KOH etching and laboratory X-ray diffraction imaging (X-ray topography) in n+ 4H-SiC wafers
David Jacques1, Vishal Ajit Shah2, Richard Bytheway1, Tamzin Lafford1, Benjamin Renz2, Peter Gammon2, Paul Ryan1, and Hrishikesh Das3
1Bruker UK Ltd, Durham, United Kingdom & 2School of Engineering, Power Electronics, University of Warwick, Coventry, United Kingdom & 3ON Semiconductor, South Portland, Maine, USA.
 
   
  P4: Surface light scattering and electron-channeling contrast imaging for quantification of bi-axially strained Si0.75Ge0.25 relaxation
Kurt Wostyn, Han Han and Roger Loo
Imec, Leuven, Belgium
 
   
  P5: Nano-ridge engineering (NRE) of III-V materials on patterned 300 mm silicon wafer
Davide Colucci1,2, Marina Baryshnikova2, Reynald Alcotte2,3, Yves Mols2, Dries Van Thourhout1, Robert Langer2 and Bernadette Kunert2
1Ghent University, Department of Information Technology, Gent, Belgium & 2Imec, Leuven, Belgium & 3KU Leuven, Leuven, Belgium
 
   
  P6: Deep level transient spectroscopy analysis on the semi-insulating carbon doped GaN layers using a novel structure
Hongyue Wang1, Brent Hsu2,3, Ming Zhao2, Eddy Simoen2,4 and Jinyan Wang1
1Department of Electronics Engineering and Computer Science, Peking University, Beijing, China & 2Imec, Leuven, Belgium, 3Department of Materials Engineering, KU Leuven, Belgium & 4Department of Solid State Sciences, Ghent University, Gent, Belgium
 
   
  P7: Characterization of defect states in Mg-doped GaN p+n diodes using Deep-Level Transient Fourier Spectroscopy (DLTFS)
Yoann Lechaux1, Albert Minj1,2, Laurence Méchin1, Hu Liang2, Karen Geens2, Ming Zhao2, Eddy Simoen2 and Bruno Guillet1
1Normandie Univ, UNICAEN, ENSICAEN, CNRS, GREYC, Caen, France & 2Imec, Leuven, Belgium
 
   
  P8: Characterization of deep levels in high resistivity substrates by photo-induced current transient spectroscopy
Eric Vandermolen1,2,3, Philippe Ferrandis4, Frédéric Allibert3, Massinissa Nabet5, C.H. (Kees) de Groot6 and Mikaël Cassé2
1Université Grenoble-Alpes, France & 2CEA/LETI, MINATEC, Grenoble, France & 3SOITEC, Bernin, France & 4Université de Toulon, Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, France & 5ICTEAM, Université catholique de Louvain, Louvain-la-Neuve, Belgium & 6School of Electronics and Computer Science, University of Southampton, UK
 
   
  P9: Gate length impact on the low frequency noise origin in GaN/AlGaN MOSHEMTs
Kenichiro Takakura1,2, Vamsi Putscha2, Eddy Simoen2,3, U. Peralagu2, AliReza Alian2, Niamh Waldron2, Bertrand Parvais2 and N. Collaert2
1National Inst. of Technol., Kumamoto College, Depart. of Information, Commun. and Electron. Eng., Kumamoto, Japan & 2Imec, Leuven, Belgium & 3Department of Solid State Sciences, Ghent University, Gent, Belgium
 
   
  P10: Electronic modification of 2D materials using ultra-low energy ion implantation
Renan Villareal1, Pin-Cheng Lin1, Harsh Bana1, Ken Verguts1,2, Steven Brems3, Stefan de Gendt2,3, Manuel Auge4, Felix Junge4, Hans Hofsäss4, E. Harrier Åhlgren5, Hossein Ghorbanfekr6, Morteza Fallah6, François Peeters6, Mehdi Neek-Amal6, Simona Achilli7, Guido Fratesi7, Chris Van Haesendonck1 and Lino M.C. Pereira1
1Quantum Solid State Physics, KU Leuven, Leuven, Belgium & 2Department of Chemie, KU Leuven, Leuven, Belgium & 3Imec, Leuven, Belgium & 4II. Insitute of Physics, University of Göttingen, Germany & 5Faculty of Physics, University of Vienna, Austria & 6Department of Physics, University of Antwerp, Belgium & 7ETSF and Dipartimento di Fisica, Università degli Studi di Milano, Italy
 
   
  P11: Defect assessment of Mg-doped Cu2O thin films prepared by RF magnetron sputtering
Naama Sliti, João Resende, Thomas Ratz and Ngoc Duy Nguyen,
Department of Physics, CESAM/SPIN, University of Liège, Belgium
 
   
  P12: Investigation of deep level defects in Cu(In,Ga)Se2 solar cells using numerical modelling
Sheng Yang1, Jessica de Wild2,3,4, Samira Khelifi5, Bart Vermang2,3,4 and Johan Lauwaert1
1Department of Electronics and Information Systems (ELIS), Ghent University, Belgium & 2IMOMEC, Diepenbeek, Belgium & 3Hasselt University, Belgium & 4EnergyVille, Genk, Belgium & 5Departmernt of Solid State Sciences, Ghent University, Belgium
 
   
  P13: Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
Jan K. Prüssing1, Tim Böckendorf1, Gerry Hamdana2, Erwin Peiner2 and Hartmut Bracht1
1Institute of Material Physics, University of Münster, Germany & 2Institute of Semiconductor Technology and Laboratory of Emerging Nanometrology (LENA), Technische Universität Braunschweig, Germany
 
   
  P14: Epitaxial growth of active Si on top of SiGe etch stop layer in view of multi-wafer stacking applications
Roger Loo1, Anne Jourdain1, Gianluca Rengo1, Clement Porret1, Andriy Hikavyy1, Maarten Liebens1, Lucas Becker2, Peter Storck2, Gerald Beyer1 and Eric Beyne1
1Imec, Leuven, Belgium & 2Siltronic AG, München, Germany
 
   
  P15: Group IV epitaxy – before defect characterization starts
Andriy Hikavyy, Clement Porret, Erik Rosseel, Roger Loo Imec, Leuven, Belgium
 
   
  P16: In-situ doped p-Si1-xGex source/drain: impact of strain relaxation on electrical properties
Gianluca Rengo1,2, Clement Porret2, Andriy Hikavyy2, Roger Loo2 and André Vantomme1
1K.U. Leuven, Quantum Solid State Physics, Leuven, Belgium & 2Imec, Leuven, Belgium
 
   
17.05u-18.15u Student Poster session
   

18.15u-18.25u

 
Gather at the registration desk

 
   
19.00u-20.00u  Reception City Hall  
   
20.30u-22.00u  Conference Dinner at Domus  
   

 

 

Friday 17 April


Session 3: Epitaxial Growth and Doping – Chair: Gudrun Kissinger & Thomas Schroeder

09.00u-09.30u Invited Speaker: Defect formation and control in strain-relaxed SiGe buffers Lucas Becker | Siltronic AG, München, Germany
   
09.30u-10.00u Invited Speaker: Modeling the dynamics of cross-hatch evolution in heteroepitaxy Francesco Montalenti | University of Milano-Bicocca, Italy
   
10.00u-10.30u Coffee break
   
10.30u-11.15u Invited Speaker: Dopant diffusion and defects in group-IV semiconductors


Hartmut Bracht |University of Münster, Germany

   
11.15u-11.35u  The impact of defects on thermally activated diffusion in group IV Si-Ge-Sn materials Nils von den Driesch | JARA-Intitute Green IT, RWTH Aachen, Germany & Peter Grünberg Insitute 9 (PGI 9) and JARA-FIT, Forschungszentrum Jülich, Germany
   
11.35u-11.55u  Diffusion of the p-type dopant boron in germanium and the impact of oxygen Felix Kipke | Institute of Materials Physics, University of Münster, Germany
   
11.55u-12.40u Invited Speaker: In situ doping in group IV epi: the role of defects A. Vohra | imec
 
12.40u-13.40u  Lunch break + Poster Session
   

 

Session 4: Defects and device operation/reliability - Chair: Eddy Simoen & Robert Langer 
 

13.40u-14.25u Invited Speaker:  Device-based electrical characterization: the ultimate sensitivity Cor Claeys | KU Leuven
   
14.25u-14.45u Oxygen precipitation in silicon as a means to investigate the impact of strain on vacancy in-diffusion from the interface with PECVD silicon nitride layers Gudrun Kissinger | IHP-Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany
   
14.45u-15.05u  Analysis of the dark current distribution of CMOS image sensors in the presence of metal contaminants M.L. Polignano | STMicroelectronics, Agrate Brianza, Italy
   
15.05u-15.25u  Defects and noise study in II-VI material for infrared detector development at Lynred company

L. Rubaldo | Lynred, Palaiseau, France

   
15.25u-15.45u  Thermally-induced defects in float zone grown Si crystals V.P. Markevich | Photon Science Institute and Department of EEE, University of Manchester, UK
   
15.45u-16.00u  Best student paper award + Concluding remarks  Eddy Simoen | imec